Electron spin resonance in amorphous silicon, germanium, and silicon carbide

The g values, line shapes, and linewidths of the ESR signals from within the bulk of amorphous silicon, germanium, and silicon carbide are found to be similar to those of the electron states observed in the surface regions of the corresponding crystalline forms. Discussion is given in terms of a microcrystalline model. © 1969 The American Physical Society.