Energy level of the nitrogen dangling bond in amorphous silicon nitride

W.L. Warren; Jerzy Kanicki; J. Robertson; P. Lenahan

doi:10.1063/1.106222

Applied Physics Letters

Paper

01 Dec 1991

Energy level of the nitrogen dangling bond in amorphous silicon nitride

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Abstract

The composition dependence and room-temperature metastability of the paramagnetic nitrogen dangling-bond center is amorphous silicon nitride suggest that its energy level lies close to the N pπ states, in agreement with theoretical calculations.

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Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous silicon thin-film transistors

Frank R. Libsch, Jerzy Kanicki

SSDM 1992

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Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors

Frank R. Libsch, Jerzy Kanicki

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Defects in amorphous hydrogenated silicon nitride films

Jerzy Kanicki, W.L. Warren

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Simple polysilicon thin film transistor structure for achieving high on/off current ratio independent of gate bias

Jerzy Kanicki, M.K. Hatalis

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