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Enhanced secondary electron injection in novel SiGe flash memory devices
Abstract
2-D MonteCarlo (MC) simulations were used to explore the property of silicon germinium (SiGe) layers to control and enhance channel-initiated secondary electron (CHISEL) gate current. Novel SiGe flash memory cells showed a 4X enhancement in CHESEL gate current for both planar and vertical 0.18μtechnology.
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