Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Paper
Epitaxial growth of silicon on Si(001) by scanning tunneling microscopy
Abstract
The epitaxial growth of silicon on Si(001)-(2x 1) substrates at temperatures between 580 and 850 K is studied using scanning tunneling microscopy (STM). The growth is strongly anisotropic, forming long narrow structures only a few dimers wide but more than 100 A long. Models are proposed for the two types of antiphase boundaries that are observed on the epitaxially grown surfaces. © 1990, American Vacuum Society. All rights reserved.
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