A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Paper
Evidence of orientation independence of band offset in AlGaAs/GaAs heterostructures
Abstract
The valence-band offset between GaAs and AlGaAs has been found to be independent of crystal orientation, as deduced from measurements of the two-dimensional hole densities in Al0.26Ga0.74As/GaAs heterojunctions. An analysis of the charge transfer yields a valence-band offset of 0.39±0.02 of the energy-gap difference. © 1985 The American Physical Society.
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