Conference paper
Stable SRAM cell design for the 32 nm node and beyond
Leland Chang, David M. Fried, et al.
VLSI Technology 2005
Paper
Evolution of the MOSFET Dynamic RAM—A Personal View
Abstract
The early conceptual stages and key elements in the development of the one-device MOSFET dynamic RAM are reviewed from the personal perspective of the author. Future miniaturization to the level of 1/4μm channel length and minimum lithography dimension is projected. © 1984 IEEE
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