Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures

Experimental evidence is presented showing that the thickness dependence observed for charge-to-breakdown measurements of very thin oxide layers in metal-oxide-semiconductor structures is correlated with that for the reduction in total generated microscopic defects necessary to induce destruction. These results are related to a percolation model for the formation of paths connecting some of these defects from the cathode to the anode at the time of breakdown. © 1997 American Institute of Physics.