Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures

Experimental evidence is presented showing that the thickness dependence observed for charge-to-breakdown measurements of very thin oxide layers in metal-oxide-semiconductor structures is correlated with that for the reduction in total generated microscopic defects necessary to induce destruction. These results are discussed in relationship to the formation of paths connecting some of these defects from the cathode to the anode at the time of breakdown.