L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Factors affecting the slope of the reactive ion etched molybdenum line have been studied with a simulation method and with experiments. Plasma chemistry and process parameters of the CF4/O2 mixture for the molybdenum etch have been examined. The theoretical calculation matches experimental results. Surface topography and composition of the etched molybdenum have been analyzed. A highly sloped molybdenum profile can be obtained by using the RIE method with a large process window. © 1990, The Electrochemical Society, Inc. All rights reserved.
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Robert W. Keyes
Physical Review B
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting