A.G. Schrott, K.N. Tu, et al.
Physical Review B
Paper
Ferroelectric field-effect transistor with a SrRuxTi1-xO3 channel
Abstract
The fabrication and remnant polarization characteristics of a ferroelectric field effect transistor (FET) with a solid-solution channel layer of SrRuxTi1-xO3 were studied. The remnant polarization at 0 V produced a relative change in the channel resistance, alongwith the coercivity of 3 V. The charge balancing act provided by the channel's off-state carrier concentration was also discussed.
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