Joseph M. Jasinski, Joan K. Frisoli, et al.
Journal of Physical Chemistry
Paper
Formation of gas-phase silyl radicals in the atomic hydrogen etching of silicon
Abstract
Mass spectrometric evidence is presented for the direct formation of gas-phase silyl radical, SiH3, as a product of the heterogeneous etching reaction of silicon films with hydrogen or deuterium atoms. © 1993.
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