Joseph M. Jasinski
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Paper
Formation of gas-phase silyl radicals in the atomic hydrogen etching of silicon
Abstract
Mass spectrometric evidence is presented for the direct formation of gas-phase silyl radical, SiH3, as a product of the heterogeneous etching reaction of silicon films with hydrogen or deuterium atoms. © 1993.
Related
Joseph M. Jasinski, Stephen M. Gates
Accounts of Chemical Research
Joseph M. Jasinski
Chemical Physics Letters
Joseph M. Jasinski
Chemical Physics Letters