Applied Physics Letters

Paper

01 Dec 1987

Formation of submicron epitaxial islands of Pd₂Si on silicon

View publication

Abstract

It has been found that annealing Pd-Er deposits on a (001) silicon surface results in the formation of isolated submicron islands of Pd2Si with two epitaxially oriented habits. By contrast, when Pd is annealed on a (111) silicon substrate, Pd2Si is formed with full coverage and a specific epitaxy.

Paper

A simple analysis of inert marker motion in a single compound layer for solid-phase epitaxy and for binary diffusion couples

U. Gösele, K.N. Tu, et al.

Journal of Applied Physics

Paper

In situ scanning electron microscope comparison studies on electromigration of Cu and Cu(Sn) alloys for advanced chip interconnects

K.-L. Lee, C.-K. Hu, et al.

Journal of Applied Physics

Paper

Observation of a novel form of ordering in Al_0.5In_0.5As and (Ga,Al)_0.5In_0.5As

C.S. Baxter, W.M. Stobbs, et al.

Journal of Crystal Growth

Paper

Low-temperature redistribution of As in Si during Pd₂Si formation

I. Ohdomari, K.N. Tu, et al.

Applied Physics Letters

View all publications