Frank Stem
C R C Critical Reviews in Solid State Sciences
Paper
Free hole - neutral donor recombination in high purity GaAs
Abstract
We report results of photoluminescence measurements in high purity n- and p-type GaAs at low temperatures which substantiate the identification of the 1.5133 eV emission line with the recombination of free valence band holes with electrons bound to shallow donors. © 1974.
Related
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992