Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Paper
Free hole - neutral donor recombination in high purity GaAs
Abstract
We report results of photoluminescence measurements in high purity n- and p-type GaAs at low temperatures which substantiate the identification of the 1.5133 eV emission line with the recombination of free valence band holes with electrons bound to shallow donors. © 1974.
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