Davood Shahrjerdi, Stephen W. Bedell, et al.
IEDM 2012
Fully depleted SOI (FDSOI) has become a viable technology not only for continued CMOS scaling to 22 nm node and beyond but also for improving the performances of legacy technology when retrofitting to old technology nodes. In this paper, we provide an overview of FDSOI technology, including the benefits and challenges in FDSOI design, manufacturing, and ecosystem. We articulate that FDSOI is potential cornerstone for China to catch up and leapfrog in semiconductor technology.
Davood Shahrjerdi, Stephen W. Bedell, et al.
IEDM 2012
Miaomiao Wang, Pranita Kulkarni, et al.
IRPS 2010
F. Allibert, Pierre Morin, et al.
S3S 2014
Ali Khakifirooz, Osama M. Nayfeh, et al.
IEEE Transactions on Electron Devices