E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Paper
Gain-Current Relation for GaAs Lasers with n-type and Undoped Active Layers
Abstract
Results for the optical gain coefficient as a function of the nominal current density are given for GaAs lasers with compensated n-type active layers and with undoped active layers. The results suggest that n-type layers may give lower threshold currents near room temperature than do comparable p-type layers. © 1973, IEEE. All rights reserved.
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