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Results for the optical gain coefficient as a function of the nominal current density are given for GaAs lasers with compensated n-type active layers and with undoped active layers. The results suggest that n-type layers may give lower threshold currents near room temperature than do comparable p-type layers. © 1973, IEEE. All rights reserved.
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
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INFOS 2005
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IEEE T-MTT
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