Conference paper
3.5ns CMOS 64K ECL RAM at 77°K
S.E. Schuster, T.I. Chappell, et al.
VLSI Circuits 1988
Paper
Geometry Effects in MOSFET Channel Length Extraction Algorithms
Abstract
Several techniques have been proposed to determine the channel length and series resistance of MOSFET's. Numerical simulations show that these algorithms must carefully account for two-dimensional geometry effects in order to extract parameters which are physically meaningful. New techniques which take these effects into account are proposed for extracting the channel length and series resistance. © 1985 IEEE
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