Conference paper
Silicide formation in Ti-Si and Co-Si reactions
L. Clevenger, Q.Z. Hong, et al.
MRS Proceedings 1993
Multilayer films of [Co 10 Å/Cu(t)]64 with copper thicknesses from t=10 to 29 Å annealed for 1 h at temperatures about 350°C showed a decrease in sample resistivity at 4.2 K. The giant magnetoresistance (GMR) maximums for as-deposited films at t=10 Å and t=23 Å shifted with annealing. The GMR decreased for t=10 Å and t=23 Å but increased for t=19 Å and t=29 Å indicating a complex behavior with annealing. Similarities with granular films are discussed.
L. Clevenger, Q.Z. Hong, et al.
MRS Proceedings 1993
K. Barmak, A. Gungor, et al.
Journal of Applied Physics
A.S. Özcan, K.F. Ludwig Jr., et al.
Journal of Applied Physics
R.S. Ruoff, D.B. Beach, et al.
Journal of Physical Chemistry