Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition

The growth of TaN was studied by plasma-enhanced-atomic layer deposition (PE-ALD) technique using TaCl5 and hydrogen and nitrogen plasmas. Good quality cubic-TaN films with resistivity as low as 350 μω cm were obtained at a low temperature of 300 °C. It was found that the growth rate and resistivity of the films increased with increasing N concentration.