Properties of Zn implanted GaN
S. Strite, P.W. Epperlein, et al.
MRS Fall Meeting 1995
A nonabsorbing etched mirror structure for AlGaAs single-quantum-well graded-refractive-index separate-confinement heterostructure ridge lasers is analyzed with respect to mirror coupling coefficient, threshold current penalty, and far-field pattern. Measurements of the mirror temperature showed a reduction from 50 to 20 K at 30 mW optical power depending on the degree of overlap of the optical intensity with the absorbing bent-waveguide profile. Pulsed catastrophic optical damage power levels up to 400 mW and a thermally saturated cw power of 165 mW with single-mode operation up to 80 mW have been achieved. Lifetime measurements at 40 mW constant optical power indicated degradation rates ≤10-5/h comparable to AlGaAs lasers with cleaved and coated mirrors.
S. Strite, P.W. Epperlein, et al.
MRS Fall Meeting 1995
H. Seifert, R.P. Huebener, et al.
Physics Letters A
S. Beeck, T. Egeler, et al.
ESSDERC 1989
F.R. Gfeller, U. Bapst
Electronics Letters