High-resolution electron-beam lithography for fabricating visible semiconductor lasers with curved mirrors and integrated holograms

Red-emitting (Al)GaInP semiconductor laser diodes with dry-etched mirror facets have been fabricated using chemically assited ion-beam etching. These devices operate single mode up to CW output powers of 30 mW. Their properties are comparable to those of lasers with cleaved mirrors. Additionally, lasers with concave and convex facets have been realized using high-resolution electron-beam lithography to define the mirror shapes. The horizontal far-field behavior of the laser is influenced by varying the shape of the facets. The same technology can be used for integrating computer-generated holograms working as focussing grating couplers. © 1994.