PaperSub-aångstrom resolution using aberration corrected electron opticsP.E. Batson, N. Dellby, et al.Nature
PaperConduction bandstructure in strained silicon by spatially resolved electron energy loss spectroscopyP.E. BatsonUltramicroscopy
Conference paperBand-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyondV. Narayanan, V.K. Paruchuri, et al.VLSI Technology 2006