K.A. Chao
Physical Review B
Paper
High speed silicon lateral trench detector on SOI substrate
Abstract
Lateral trench photodetectors (LTD) on silicon-on-insulator (SOI) have been fabricated using a fully CMOS compatible process. High speed (2.0 GHz), high quantum efficiency (51%), and excellent frequency response characteristics have been achieved at 851 nm with a supply voltage of only 3.3 V.
Related
J.A. Barker, D. Henderson, et al.
Molecular Physics
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997