Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
A combination of diblock copolymer self-assembly and state-of-the-art semiconductor device fabrication methods is used to create highly uniform suspended porous silicon membranes. Integration of these two processing techniques is key to realizing manufacturable high quality devices. Three different methods are shown for adjusting membrane pore dimensions between 10 and 35 nm, allowing device optimization for specific applications. © 2006 American Vacuum Society.
T.N. Morgan
Semiconductor Science and Technology
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990