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Zeitschrift fur Kristallographie - New Crystal Structures
We have investigated hot carrier dynamics in GaSb structures, bulk and quantum wells, using picosecond time-resolved photoluminescence. Bulk samples show remarkably little carrier heating which we attribute to rapid electron relaxation within the L valleys. Quantum wells show slower cooling than the bulk, which is consistent with similar measurements of other III-V systems. Strong Auger recombination heating of the plasma is found to be responsible for maintaining relatively high temperatures at times ≥ 25 ps. © 1989.
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
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Active Matrix Liquid Crystal Displays Technology and Applications 1997
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Physica E: Low-Dimensional Systems and Nanostructures