John G. Long, Peter C. Searson, et al.
JES
Paper
Hot-electron dynamics in SiO2 and the degradation of the Si/SiO2-interface
Abstract
Monte Carlo transport simulations are used to calculate the interface-state buildup at the Si/SiO2-interface during high-field current stress using a hot-electron-induced hydrogen-release model. © 1993.
Related
J. Tersoff
Applied Surface Science
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics