Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
The theory of the dependence of electron temperature on Joule energy input, for degenerate carriers in a heterolayer, is outlined. Numerical results for GaAs electrons are computed and displayed. © 1984 The American Physical Society.
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
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Advanced Materials
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