Robert H. Dennard, Matthew R. Wordeman
Physica B+C
Paper
IIIB-1 Degradation of 77-K MOSFET Characteristics Due to Channel Hot Electrons
Abstract
No abstract available.
Related
George A. Sai-Halasz, Matthew R. Wordeman, et al.
IEEE Electron Device Letters
Conference paper
A shorted global clock design for multi-GHz 3D stacked chips
Liang-Teck Pang, Phillip J. Restle, et al.
VLSI Circuits 2012
Robert H. Dennard, Matthew R. Wordeman
IEEE T-ED