D.J. DiMaria, M.V. Fischetti, et al.
Physical Review Letters
Paper
IIIB-5 Fabrication of Thin Gate Oxide MOSFET's Using Low-Temperature Plasma-Enhanced Chemical-Vapor-Deposited SiO2
Abstract
No abstract available.
Related
D.A. Buchanan, J. Batey, et al.
IEEE Electron Device Letters
J.H. Stathis, J. Chapple-Sokol, et al.
Applied Physics Letters
E.A. Irene, E. Tierney, et al.
JES