PaperEpitaxial Growth of GaAs with (C2H5)2GaCl and AsH3 in a Hotwall ReactorT.F. Kuech, M.A. Tischler, et al.JES
PaperHot-electron capture to DX centers in AlxGa1-xAs at low Al mole fractions (x<0.2)T.N. Theis, B.D. Parker, et al.Applied Physics Letters
PaperDevice innovation and material challenges at the limits of CMOS technologyP. SolomonAnnual Review of Materials Science