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Microelectronic Engineering
The recovery of the RHEED specular intensity during interrupted MBE is investigated by application of a Monte Carlo simulation of the solid-on-solid model. Procedures are described for characterizing the pathways and quantifying energy barriers to surface recovery in both low- and high-temperature limits in ways that complement and extend existing techniques. © 1989.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
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SPIE Advances in Semiconductors and Superconductors 1990
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