M. Hargrove, S.W. Crowder, et al.
IEDM 1998
This paper reviews the physical mechanisms that are responsible for interband resonant tunneling in type II heterostructures, in particular GaSb/AlSb/Ir,As/AlSb/GaSb. An analysis of their low-temperature current-voltage characteristics, when combined with the application of strong magnetic fields and hydrostatic pressure, provides detailed information on energy and momentum conservation rules, band parameters, and magnetic energy levels, including spin splitting of the lowest Landau level. © 1992.
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
K.A. Chao
Physical Review B
Michiel Sprik
Journal of Physics Condensed Matter
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010