A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
The interband sum frequency generation process due to three-wave interaction of interband and intersubband coupling lights has been investigated in a semiconductor quantum well using the perturbational density matrix approach. The origin of the nonlinear process lies in the second-order susceptibility Xc2-h1(2) arising due to the optical transition between the second conduction subband and the first heavy hole state. Both the sign and the magnitude of the second-order susceptibility of the well may be controlled by the carrier density level and the frequency of the intersubband field.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Michiel Sprik
Journal of Physics Condensed Matter
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007