The DX centre
T.N. Morgan
Semiconductor Science and Technology
Recent experiments revealed an apparently bias-dependent tunneling magnetoresistance between a transition metal (such as Fe, Co) and an oxide barrier such as SrTiO3. We examine the materials issues involved in this type of hybrid transition metal-oxide junctions. The junction interface is shown to be unstable against thermal treatment or high-bias current stress. We conclude that the junction magnetoresistance is largely determined by the formation of an interface oxide layer different from the barrier or the transition metal electrode themselves.
T.N. Morgan
Semiconductor Science and Technology
A. Krol, C.J. Sher, et al.
Surface Science
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting