E. Gusev, D.A. Buchanan, et al.
Technical Digest - International Electron Devices Meeting
Paper
Interfacial oxide formation and oxygen diffusion in rare earth oxide-silicon epitaxial heterostructures
Abstract
The interfacial oxide formation and oxygen diffusion in rare earth oxide-silicon epitaxial heterostructures were reported. The interfacial oxide thickness was found to be higher than the silicon dioxide thickness. The thick interfacial oxide formation implied that oxygen was diffused rapidly through the epitaxial oxide layer, and suggested the involvement of atomic oxygen in the oxidation process.
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