Joel Silberman, Naoaki Aoki, et al.
IEEE Journal of Solid-State Circuits
An ion microbeam radiation test system has been built for studying radiation-induced charge collection and single event upsets in advanced semiconductor circuits. With this system, it is possible to direct an ion beam of diameter as small as 1 p.m onto a circuit or test structure with a placement accuracy of 1 μm. The components of the system, and its operation, are described. Applications are described which demonstrate the capabilities of the system. © 1993 IEEE
Joel Silberman, Naoaki Aoki, et al.
IEEE Journal of Solid-State Circuits
S.J. Koester, R. Hammond, et al.
EDMO 1999
P. Solomon, M. Shamsa, et al.
IEDM 2007
P. Oldiges, R.H. Dennard, et al.
IEDM 2009