S.J. Koester, K.L. Saenger, et al.
IEEE Electron Device Letters
An ion microbeam radiation test system has been built for studying radiation-induced charge collection and single event upsets in advanced semiconductor circuits. With this system, it is possible to direct an ion beam of diameter as small as 1 p.m onto a circuit or test structure with a placement accuracy of 1 μm. The components of the system, and its operation, are described. Applications are described which demonstrate the capabilities of the system. © 1993 IEEE
S.J. Koester, K.L. Saenger, et al.
IEEE Electron Device Letters
Pong-Fei Lu, Nianzheng Cao, et al.
ISLPED 2006
S.E. Schuster, W. Reohr, et al.
ISSCC 2000
S.V. Kosonocky, A.A. Bright, et al.
VTS 1998