J.A. Barker, D. Henderson, et al.
Molecular Physics
We describe the influence of local magnetization on electron localization in magnetic semiconductors. This includes a review of the magnetic field induced insulator-metal transition in Gd3-xvxS4 (where v=vacancy) and the observation of activated transport, i.e. a 'hard' gap, in the hopping regime for the diluted magnetic semiconductor Cd1-xMnxTe. © 1994.
J.A. Barker, D. Henderson, et al.
Molecular Physics
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures