M. Hargrove, S.W. Crowder, et al.
IEDM 1998
We describe the influence of local magnetization on electron localization in magnetic semiconductors. This includes a review of the magnetic field induced insulator-metal transition in Gd3-xvxS4 (where v=vacancy) and the observation of activated transport, i.e. a 'hard' gap, in the hopping regime for the diluted magnetic semiconductor Cd1-xMnxTe. © 1994.
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
R. Ghez, M.B. Small
JES
J.A. Barker, D. Henderson, et al.
Molecular Physics