Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We have observed controlled, low-voltage breakdown of the quantum Hall state in GaAs-AlxGa1-xAs heterostructures with lateral constrictions a few micrometers in width. The breakdown characteristics show an onset of dissipation at voltages corresponding to the cyclotron energy for even filling factors. Analysis of these results in terms of a simple model implies that the dissipation process involves interlevel as well as intralevel scattering, and therefore that large potential gradients are present in the two-dimensional electron gas. © 1986 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
J.Z. Sun
Journal of Applied Physics
R.W. Gammon, E. Courtens, et al.
Physical Review B
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures