Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Measurements of the magnetocapacitance of a two-dimensional electron gas in high mobility GaAs(Ga, Al)As heterostructure confirm, for the first time, the relationship between the density of states and the capacitance of a two-dimensional electron gas. We present the first magnetocapacitance measurements in the fractionally quantized Hall regime. © 1986.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Michiel Sprik
Journal of Physics Condensed Matter
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990