S. Ingvarsson, G. Xiao, et al.
Journal of Applied Physics
Paper
Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling
Abstract
Magnetoresistance (MR) measurement of unpatterned magnetic tunnel junction wafers was discussed. Current-in-plane tunneling was used. It was found that results are particularly useful for optimizing deposition conditions, nondestructive monitoring and also measures thermal stability.
Related
P.L. Trouilloud, B. Petek, et al.
IEEE Transactions on Magnetics
Conference paper
Low-current spin transfer torque MRAM
D.C. Worledge, A. Annunziata, et al.
INTERMAG 2015
Jonathan Z. Sun, S.L. Brown, et al.
Physical Review B - CMMP