Micro-four-point-probe characterization of nanowires fabricated using the nanostencil technique

Micro four-point probes fabricated using a conventional silicon microfabrication technique were used to measure the resistivity of thin Au and Pt nanowires deposited with the nanostencil evaporation method in both direct and indirect contact modes. We found the resistivity to be an order of magnitude larger than the bulk values for both nanowires. A micrometre-resolution resistivity map was obtained of the Pt nanowires, but could not be obtained of the Au wires due to poor adhesion. We discuss the microprobe as a tool for the characterization of such small structures and the possibilities of further improving the technique.