Molecular-beam epitaxy (MBE) of In_1-xGa_xAs and GaSb_1-yAs_y

Films of In1-xGaxAs and GaSb1-yAs y over the entire composition ranges have been grown on (100) GaAs, InAs, and GaSb substrates by MBE. In situ observations by high-energy electron diffraction have revealed a variety of surface reconstructions and correlated the growth process with the lattice mismatch. The compositions are governed by the relative rates of In and Ga in In1-xGaxAs, but primarily by that of Sb in GaSb1-yAsy because of its dominant incorporation over As. In these alloys, Sn is found to be a donor throughout In1-xGaxAs but an amphoteric impurity in GaSb1-yAsy.