Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
We report the fabrication of single-electron tunneling transistors consisting of a single nm-scale aluminum particle connected via tunnel junctions to two leads and capacitively coupled to a third gate electrode. We have used these devices to measure the spectra of discrete electronic quantum energy levels in the particle while tuning the number of electrons it contains. © 1996 Academic Press Limited.
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
K.A. Chao
Physical Review B