Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
We report the fabrication of single-electron tunneling transistors consisting of a single nm-scale aluminum particle connected via tunnel junctions to two leads and capacitively coupled to a third gate electrode. We have used these devices to measure the spectra of discrete electronic quantum energy levels in the particle while tuning the number of electrons it contains. © 1996 Academic Press Limited.
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
Peter J. Price
Surface Science