P. Alnot, D.J. Auerbach, et al.
Surface Science
We report the fabrication of single-electron tunneling transistors consisting of a single nm-scale aluminum particle connected via tunnel junctions to two leads and capacitively coupled to a third gate electrode. We have used these devices to measure the spectra of discrete electronic quantum energy levels in the particle while tuning the number of electrons it contains. © 1996 Academic Press Limited.
P. Alnot, D.J. Auerbach, et al.
Surface Science
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
J.A. Barker, D. Henderson, et al.
Molecular Physics
E. Burstein
Ferroelectrics