M. Hargrove, S.W. Crowder, et al.
IEDM 1998
A report is presented on the high-performance nanoscale transistors for future computers. Carbon nanotube transistors integrated with ZrO2 gate oxides are emerging as very promising candidates. Carbon nanotubes are inert, present no surface states and are compatible with other materials such as oxides.
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
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Zeitschrift fur Kristallographie - New Crystal Structures
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MRS Proceedings 1983
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology