Nanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drain

The authors report the fabrication of a p -field effect transistor (FET) and an n -FET with a silicon nanowire channel and doped silicon source and drain regions. The silicon nanowires were synthesized by the vapor-liquid-solid method. For p -FETs the source and drain regions were formed by adding boron doped silicon to the unintentionally doped nanowire body at predefined locations using in situ doped silicon epitaxy. For n -FETs the epitaxial source and drain regions were grown undoped and were later implanted with P and As. The measured Id - Vg characteristics of the devices exhibited unipolar transport, while reference FETs made with nanowires from the same batch but with Schottky (metal) contacts exhibited ambipolar characteristics. © 2007 American Institute of Physics.