Physical Review Letters

Paper

02 May 1966

Negative field-effect mobility on (100) Si surfaces

View publication

Abstract

No abstract available.

Paper

Memory in thin-film electroluminescent devices

W.E. Howard

Journal of Luminescence

Paper

Effects of low-energy electron irradiation on Si-insulated gate fets

A.J. Speth, F. Fang

Applied Physics Letters

Paper

One-dimensional numerical simulation of ac discharges in a high-pressure mixture of Ne+0.1% Ar confined to a narrow gap between insulated metal electrodes

O. Sahni, C. Lanza, et al.

Journal of Applied Physics

Paper

Floating gate technique as a thermodynamic probe of two-dimensional electron systems

A.M. Dabiran, F. Fang, et al.

Surface Science

View all publications