William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Empirical interatomic potentials permit the calculation of structural properties and energetics of complex systems. A new approach for constructing such potentials, by explicitly incorporating the dependence of bond order on local environment, permits an improved description of covalent materials. In particular, a new potential for silicon is presented, along with results of extensive tests which suggest that this potential provides a rather realistic description of silicon. The limitations of the potential are discussed in detail. © 1988 The American Physical Society.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
R. Ghez, J.S. Lew
Journal of Crystal Growth
Frank Stem
C R C Critical Reviews in Solid State Sciences