Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Quasihydrostatic pressure resistivity experiments on a single crystal of SmS are reported up to 27.5 kbar. At low temperature, a regime change occurs at P ∼ 20 kbar, between a "quasiinsulating" behavior (P < 20 kbar) and a metallic ground state (P 20 kbar). Striking similarities appear with TmSe and TmS cases. © 1981.
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Lawrence Suchow, Norman R. Stemple
JES
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
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MRS Fall Meeting 2020