Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We have investigated nickel in silicon samples with a wide range of initial doping concentrations by EPR, DLTS and photo-EPR techniques. Our results show that the two different Ni-centers which were observed previously by EPR, but whose structure could not be interpreted unambiguously, are both associated with Ni in a substitutional position. They are distinguished by their charges and by slightly different displacements from the ideal substitutional site. A model for the Nis+-center is suggested which explains the symmetry of this center.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
John G. Long, Peter C. Searson, et al.
JES
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules