S.M. Faris
IEEE Circuits and Systems Magazine
The time-averaged current induced by incident radiation across electronic tunneling junctions is shown experimentally and theoretically to have a highly nonlinear dependence on the field intensity for a range of tunneling barrier thickness.
S.M. Faris
IEEE Circuits and Systems Magazine
S.M. Faris, N.F. Pedersen
Physica B+C
T.K. Gustafson, P.L. Kelley, et al.
Applied Physics Letters
S.M. Faris, E.A. Valsamakis
Journal of Applied Physics