J.A. Van Vechten
Journal of Crystal Growth
In the accompanying paper we have given evidence that pulsed laser annealing of Si does not involve normal thermal melting and recrystallization. Here we argue the importance of the electron-hole plasma produced by the laser to the annealing process. © 1979.
J.A. Van Vechten
Journal of Crystal Growth
J.A. Van Vechten
Physical Review B
J.A. Van Vechten, R. Tsu, et al.
Physics Letters A
R. Tsu, A. Koma, et al.
Journal of Applied Physics